美光的 16nm 製程技術可在單一晶粒上提供 16GB 的儲存，是迄今為止開發出最高容量的平面 NAND 快閃記憶體。使用此製程，一片 300mm 的晶圓上即可創造出將近 6TB 的儲存。 twelve.one DeepL warrants which the Products and services shall execute in accordance With all the Documentation and Service Specification in all materials respects, apart from in which any non-conformance is because of use from... https://seanf107zho4.develop-blog.com/profile